BYV32EB-200_4
? NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 2 March 2009 3 of 9
NXP Semiconductors
BYV32EB-200
Dual rugged ultrafast rectifier diode, 20 A, 200 V
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
-200V
VRWM
crest working reverse
voltage
-200V
VR
reverse voltage DC - 200 V
IO(AV)
average output current square-wave pulse; δ
= 0.5; Tmb
≤
115 °C; both
diodes conducting; see Figure 1; see Figure 2
-20A
IFRM
repetitive peak forward
δ
= 0.5; tp
= 25 μs; Tmb
≤
115 °C; per diode - 20 A
current
IFSM
non-repetitive peak
forward current
tp
= 8.3 ms; sine-wave pulse; Tj(init)
= 25 °C; per
diode
-137A
tp
= 10 ms; sine-wave pulse; Tj(init)
=25°C; per
diode
-125A
IRRM
repetitive peak reverse
δ
= 0.001; tp
=2μs - 0.2 A
current
IRSM
non-repetitive peak
reverse current
tp
= 100 μs - 0.2 A
Tstg
storage temperature -40 150 °C
Tj
junction temperature - 150 °C
VESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 k?; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0124
8
0155
10
IF(AV)
(A)
IF(AV)
(A)
003aac978
4
8
12
0
1.9
a = 1.57
2.2
2.8
4.0
Ptot
(W)
003aac979
5
10
15
0
0.5
0.2
0.1
Ptot
(W)
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